When you see a nicely presented set of data, the natural response is: "e;How did they do that; what tricks did they use; and how can I do that for myself?"e; Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed conductor devices, a topic that is often absent in the technical literature. The author provides experience-based tricks of the trade and the subtle nuances of measuring and modeling, making this an important reference for semiconductor fabrication laboratory workers. Topics include compact modeling using integrated CAD tools and design kits, noise mitigation approaches, Germanium RF designs, transmission lines, and improved de-embedding techniques.